Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Patent
1997-05-15
1998-12-22
Powell, William
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Optical characteristic sensed
156345, 216 85, 438 14, 438 16, H01L 2100
Patent
active
058518428
ABSTRACT:
The measurement system comprises a holder for holding a dielectric film formed on at least a semiconductive substrate and sandwiched between the substrate and a conductive film, voltage application terminals for applying voltage between the substrate and the conductive film, variable voltage source for supplying the voltage to the voltage application terminals, a light source for irradiating the dielectric film with light including wavelength of an infrared region and transmitting the light through the dielectric film, light absorbance detector receiving the light transmitted through the dielectric film, for detecting absorbance of an absorbed light component in an absorption wavelength region intrinsic to the dielectric film, and a potential difference measurement unit for measuring a potential difference between the substrate and the conductive film of the dielectric film on the basis of change in absorbance of the light component when the voltage is changed by the variable voltage source.
REFERENCES:
patent: 5322590 (1994-06-01), Koshimizu
patent: 5658418 (1997-08-01), Coronel et al.
patent: 5683538 (1997-11-01), O'Neill et al.
Jun Kikuchi, et al., "Pulse-Modulated Infrared-Laser Interferometric Thermometry for Si Substrate Temperature Measurement", SPIE Manufacturing Process Control For Microelectronic Devices and Circuits, vol. 2336, pp. 111-119.
Hayasaka Nobuo
Higashikawa Iwao
Hotta Masaki
Katsumata Ryota
Miyajima Hideshi
Kabushiki Kaisha Toshiba
Powell William
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