Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2005-04-12
2005-04-12
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
With measuring or testing
C438S015000, C438S016000, C324S765010, C356S432000
Reexamination Certificate
active
06878559
ABSTRACT:
Any semiconductor wafer fabrication process may be changed to monitor lateral abruptness of doped layers as an additional step in the wafer fabrication process. In one embodiment, a test structure including one or more doped regions is formed in a production wafer (e.g. simultaneously with one or more transistors) and one or more dimension(s) of the test structure are measured, and used as an estimate of lateral abruptness in other doped regions in the wafer, e.g. in the simultaneously formed transistors. Doped regions in test structures can be located at regularly spaced intervals relative to one another, or alternatively may be located with varying spacings between adjacent doped regions. Alternatively or in addition, multiple test structures may be formed in a single wafer, with doped regions at regular spatial intervals in each test structure, while different test structures have different spatial intervals.
REFERENCES:
patent: 4571685 (1986-02-01), Kamoshida
patent: 4978627 (1990-12-01), Liu et al.
patent: 5159412 (1992-10-01), Willenborg et al.
patent: 5181080 (1993-01-01), Fanton et al.
patent: 5228776 (1993-07-01), Smith et al.
patent: 5379109 (1995-01-01), Gaskill et al.
patent: 6274449 (2001-08-01), Vasanth et al.
patent: 6649429 (2003-11-01), Adams et al.
patent: 6694284 (2004-02-01), Nikoonahad et al.
patent: 6734968 (2004-05-01), Wang et al.
Borden Peter G.
Kluth G. Jonathan
Paton Eric
Advanced Micro Devices , Inc.
Applied Materials Inc.
Luk Olivia T.
Niebling John F.
Silicon Valley Patent & Group LLP
LandOfFree
Measurement of lateral diffusion of diffused layers does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Measurement of lateral diffusion of diffused layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Measurement of lateral diffusion of diffused layers will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3423955