Measurement of film thickness of integrated circuits

Details Measurement of film thickness of integrated circuits Measurement of film thickness of integrated circuits

1987-04-23

1989-02-07

Buczinski, Stephen C.

Radiant energy

Inspection of solids or liquids by charged particles

Methods

250310, G01N 2300

Patent

active

H00005894

ABSTRACT:
A narrow, high energy, electron beam is caused to impinge upon an integrated circuit. The accelerating voltage of the electron beam is increased in incremental steps (3 or more) so that the electrons penetrate into the film and then into the substrate. The transmitted electrons interact with the film and substrate materials to generate distinct X-rays. The relative X-ray intensities of the film material to that of the substrate material is utilized to determine the film thickness.

REFERENCES:
patent: 3376419 (1968-04-01), Schumacher
Hormztz et al., "Use of SEM for plating thickness messurement," Scan. Elec. icroscopy, Apr. 1976.
"Determination of Kilovolt Electron Energy Dissipation vs. Penetration Distance in Solid Materials" by T. E. Everhart and P. H. Hoff, Journal of Applied Physics, vol. 42, No. 13, Dec. 1971, pp. 5837-5846.
"A Simple Analytical Method for Thin Film Analysis With Massive Pure Element Stanards"by Harvey Yakowitz and Dale E. Newbury Scanning Electron Microscopy/1976 (Part I) Proceedings of the Ninth Annual Scanning Electron Microscope Symposium, pp. 151-162.

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