Measurement of electron shading damage

Details Measurement of electron shading damage Measurement of electron shading damage

1999-03-18

2000-09-05

Chaudhari, Chandra

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

438250, 438591, H01L 2166

Patent

active

061141828

ABSTRACT:
A resist pattern having a high-density pattern area and a low-density pattern area is formed on a layered MNOS capacitor structure composed of a Ti(O)N layer and a WSi.sub.2 layer formed on nitride/oxide insulating layer on a semiconductor substrate. After the etching of the layered structure in the low-density resist pattern area is finished, the layered structure is further processed with plasma of HBr only, a mixed gas of a halogen-containing gas and oxygen gas, or a fluorine-containing gas, for a desired period of time, to give electron shading damage. In this plasma processing, the Ti(O)N layer is etched little. The electron shading damage is measured through the change in the flat band voltage of the MNOS capacitor.

REFERENCES:
patent: 3893152 (1975-07-01), Lin
patent: 4151537 (1979-04-01), Goldman et al.
patent: 4840917 (1989-06-01), Sheu
Concise Explanation of Relevent Portions of References--2 pages.
Suguru Tabara, A New Etching Method for Reducing the Electron Shading Damage Using ICP Etcher, May 13-14, 1996, pp. 51-53.
Koichi Hashimoto, New Phenemona of Charge Damage in Plasma Etching: Heavy Damage Only through Dense-Line Antenna, Dec. 1993, pp. 6109-6113.
Koichi Hashimoto, Charge Damage Caused by Electron Shading Effect, Oct. 1994, pp. 6013-6018.

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