Means and method for a self-aligned multilayer laser epitaxy str

Details Means and method for a self-aligned multilayer laser epitaxy str Means and method for a self-aligned multilayer laser epitaxy str

1983-08-12

1986-11-18

Kimlin, Edward

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156649, 156612, 148175, 29580, 29569L, 357 55, 357 17, 372 46, H01L 2120, H01L 21306, H01S 319

Patent

active

046234276

ABSTRACT:
A method of forming the proper metallization contacts in a multilayer epitaxy laser device is provided. By selecting the proper crystal plane orientation in etching nonplanar features like channels for the device, a differential etch rate in a free-etch can be effected to remove only selected portions of the top layer and to provide self-alignment in the metallization process.

REFERENCES:
patent: 4033796 (1977-07-01), Burnham et al.
patent: 4099305 (1978-07-01), Cho et al.
patent: 4166253 (1979-08-01), Small et al.
patent: 4433417 (1984-02-01), Burnham et al.
patent: 4503539 (1985-03-01), Mori et al.
Lida et al., "Selective Etching of GaAs in H.sub.2 SO.sub.4 -H.sub.2 O.sub.2 -H.sub.2 O System", J. Electrochemical Soc., vol. 118, No. 5, May 1971, pp. 768-771.
Tijburg et al., "Selective Etching of III-V Compounds with Redox System", J. Electrochemic Soc., vol. 123, No. 5, May 1976, pp. 687-691.
Otsubo et al., "Preferential Etching of GaAs through Photoresist Masks", J. Electrochemical Soc., vol. 123, No. 5, May 1976, pp. 676-680.
Shima et al., "Buried Convex Waveguide Structure (GaAl)As Injection Lasers", Appl. Phys. Lett., vol. 38, No. 8, Apr. 1981, pp. 605-607.
Tsang et al., "Profile and Groove-Depth Control in GaAs . . . Etching in H.sub.2 SO.sub.4 -H.sub.2 O.sub.2 -H.sub.2 O System", Applied Physics Letters, vol. 28, No. 1, Jan. 1, 1976, pp. 44-46.
"Physics of Semiconductor Devices", S. M. Sze, Wiley-Interscience, 1969, pp. 452-455 and 470-473.

Affiliated with

Also associated with

Rating

Means and method for a self-aligned multilayer laser epitaxy str does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Means and method for a self-aligned multilayer laser epitaxy str, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Means and method for a self-aligned multilayer laser epitaxy str will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1616173