MBE growth technique for matching superlattices grown on GaAs su

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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148175, 427 87, 156DIG103, C30B 2502

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045170479

ABSTRACT:
Misfit dislocation density at an InAs-GaAs interface is reduced in both I-GaSb and In.sub.1-x Ga.sub.x As-GaSb.sub.1-y As.sub.y superlattices grown on GaAs substrates by means of a MBE (molecular beam epitaxy) growth technique consisting of a step graded sequence of composition layers between substrate and superlattice whose composition changes in discrete concentration steps from the composition of the substrate to the composition of the superlattice.

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