MBE growth of a semiconductor layer structure

Details MBE growth of a semiconductor layer structure MBE growth of a semiconductor layer structure

2003-08-18

2009-12-08

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Plural fluid growth steps with intervening diverse operation

C257SE21097, C257SE21109, C438S478000, C438S488000

Reexamination Certificate

active

07629237

ABSTRACT:
A method of MBE growth of a semiconductor layer structure comprises growing a first (Al,Ga)N layer (step13) over a substrate at the first substrate temperature (T1) using ammonia as the nitrogen precursor. The substrate is then cooled (step14) to a second-substrate temperature (T2) which is lower than the first substrate temperature. An (In,Ga)N quantum well structure is then grown (step15) over the first (Al,Ga)N layer by MBE using ammonia as the nitrogen precursor. The supply of ammonia to the substrate is maintained continuously during the first growth step, the cooling step, and the second growth step. After completion of the growth of the (In,Ga)N quantum well structure, the substrate may be heated to a third temperature (T3) which is greater than the second substrate temperature (T2). A second (Al,Ga)N layer is then grown over the (In,Ga)N quantum well structure (step17).

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