Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Reexamination Certificate
2006-08-01
2006-08-01
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
C326S063000, C327S333000, C365S190000
Reexamination Certificate
active
07085177
ABSTRACT:
An apparatus comprising a first transistor pair, second transistor pair, a third transistor pair and a fourth transistor pair. The first transistor pair may be (i) implemented as thin oxide devices and (ii) configured to receive a differential input signal. The second transistor pair may be (i) implemented as thick oxide devices and (ii) configured to generate a differential output signal in response to the differential input signal. The output signal has a voltage higher than the input signal. The third transistor pair may be (i) connected between the first and second transistor pairs and (ii) configured to protect the first transistor pair. The fourth transistor pair may be (i) connected between the third transistor pair and a ground and (ii) configured to increase an operating speed of the apparatus.
REFERENCES:
patent: 5377143 (1994-12-01), McClure
patent: 6300796 (2001-10-01), Troutman et al.
patent: 6801181 (2004-10-01), Matsumoto et al.
Christopher P. Maiorana P.C.
LSI Logic Corporation
LandOfFree
Maximum swing thin oxide levelshifter does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Maximum swing thin oxide levelshifter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Maximum swing thin oxide levelshifter will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3708619