Matrix type piezoelectric/electrostrictive device and...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive

Reexamination Certificate

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C438S001000, C438S003000, C438S660000

Reexamination Certificate

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10834297

ABSTRACT:
A method of making a matrix type piezoelectric/electrostrictive device having a plurality of pillar shaped piezoelectric/electrostrictive elements, each having a piezoelectric/electrostrictive substance and at least a pair of electrodes being formed on the sides of the substance, are vertically provided on a thick ceramic substrate, such that the device is driven by displacement of the piezoelectric/electrostrictive substance. In this device, the piezoelectric/electrostrictive elements are integrally bonded to the ceramic substrate and independently arranged in two dimensions. The percentage of transgranularly fractured crystal grains on at least the sides of the piezoelectric/electrostrictive substance on which the electrodes are formed is 10% or less. The unit forms a curved surface near a joined section between the substance and the substrate.

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