Materials having low dielectric constants and method of making

Details Materials having low dielectric constants and method of making Materials having low dielectric constants and method of making

2006-02-14

2006-02-14

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S010000, C438S787000, C438S788000

Reexamination Certificate

active

06998636

ABSTRACT:
The invention relates to a material including carbon, oxygen, silicon and hydrogen and having a dielectric constant of from about 2.1 to about 3.0 where an FTIR scan of the material includes at least two major peaks signifying Si—CH3bonding. The invention further relates to a material which has a variable dielectric constant through the thickness of the material. Another aspect of the invention is the method of making the material.

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