Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-07-31
2007-07-31
Schillinger, Laura M. (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S693000
Reexamination Certificate
active
09869347
ABSTRACT:
Provided are a metal-polishing liquid that comprises an oxidizing agent, an oxidized-metal etchant, a protective film-forming agent, a dissolution promoter for the protective film-forming agent, and water; a method for producing it; and a polishing method of using it. Also provided are materials for the metal-polishing liquid, which include an oxidized-metal etchant, a protective film-forming agent, and a dissolution promoter for the protective film-forming agent.
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Honma Yoshio
Hoshino Tetsuya
Kamigata Yasuo
Kondoh Seiichi
Koyama Naoyuki
Antonelli, Terry Stout & Kraus, LLP.
Hitachi Chemical Company Ltd.
Schillinger Laura M.
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