Materials for electronic devices

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond

Reexamination Certificate

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C257S700000

Reexamination Certificate

active

07148577

ABSTRACT:
Improved materials for use in the fabrication of electronic devices and devices made therewith are described. The materials comprise fillers having a negative coefficient of thermal expansion.

REFERENCES:
patent: 3568012 (1971-03-01), Ernst et al.
patent: 3568021 (1971-03-01), Ernst et al.
patent: 4135038 (1979-01-01), Takami et al.
patent: 5919720 (1999-07-01), Sleight et al.
patent: 6110596 (2000-08-01), Kasori et al.
patent: 6326685 (2001-12-01), Jin et al.
patent: 6365269 (2002-04-01), Atzesdorfer et al.
patent: 6673279 (2004-01-01), Gardner
patent: 2002/0105093 (2002-08-01), Papathomas
patent: 2003/0215661 (2003-11-01), Lo et al.
patent: 2004/0214377 (2004-10-01), Starkovich et al.
patent: 2005/0110168 (2005-05-01), Chuang
J. Qu et al., “Effective Elastic Modulus of Underfill Material for Flip-Chip Applications”, The Woodruff School of Mechanical Engineering, School of Material Science and Engineering, Packaging Research Center, Georgia Institute of Technology, 3 pages.
Discussion within the present Information Disclosure Statement.
Gail, R., “Breakthrough ceramic can take the heat” pp. 3, Electronic Engineering Times, May 20, 1996.
Evans, J.S.O., et al. “Negative thermal expansion materials”, pp. 1 Abstract, www.ei.org/ (2001).
Chang, W., Technical Literature, “Zirconium Tungstate” pp. 17, printed on Dec. 10, 2001.
Perottoni, et al., “Pressure-induced amporhization and negative thermal expansion in Zr2W208” Science, May 8, 1998, v280 n5365 p886(4), pp. 4, http://web2.insite2.gale.com/.
Anonymous, “Zirconium Tungstate Behavior Explained” High Tech Ceramics News, Apr. 1, 1997 v8 i12 pN/A, pp. 2.
Anonymous, “Optoelecronics: Zirconium Tungstate Behvior Explained” Optical materials & Engineering News, Feb. 1, 1997 v7 i6 pN/A, pp. 2.
Evans, et al., “Compressibility, phase transitions, and oxygen migration in zirconium tungstate, ZrW208” Science, Jan. 3, 1997, v275 n5296 p61 (5), pp. 6.
Anonymous, “Ceramic in wonderland: materials science” The Economist (US), Apr. 27, 1996 v339 n7963 p88(2), pp. 2.
Anonymous, “Zirconium Tungstate Intrigues Researchers” New Technology Week, Apr. 15, 1996 v10 i16 pN/A, pp. 1.
Anonymous, “Introducing the incredible shrinking ceramic . . . ” New Scientist, Apr. 13, 1996, p17, pp. 2.
Mary, et al., “Negative thermal expansion form 0.3 to 1050 Kelvin in ZrW208” Science, Apr. 5, 1996, v272 n5258 p90(3), pp. 5.

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