Materials and methods for forming hybrid organic-inorganic...

Details Materials and methods for forming hybrid organic-inorganic... Materials and methods for forming hybrid organic-inorganic...

2006-06-13

2006-06-13

Thomas, Tom (Department: 2815)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S623000, C438S631000, C438S781000, C438S788000, C438S792000, C257S642000, C257S759000

Reexamination Certificate

active

07060634

ABSTRACT:
An integrated circuit is provided comprising a substrate and discrete areas of electrically insulating and electrically conductive material, wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3or more and a dielectric constant of 3.0 or less. The integrated circuit can be made by a method comprising: providing a substrate; forming discrete areas of electrically insulating and electrically conductive material on the substrate; wherein the electrically insulating material is deposited on the substrate followed by heating at a temperature of 350° C. or less; and wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3or more after densification. Also disclosed is a method for making an integrated circuit comprising performing a dual damascene method with an electrically conductive material and a dielectric, the dielectric being a directly photopatterned hybrid organic-inorganic material.

REFERENCES:
patent: 5117272 (1992-05-01), Nomura et al.
patent: 6383912 (2002-05-01), Chung et al.
patent: 6448655 (2002-09-01), Babich et al.
patent: 6660391 (2003-12-01), Rose et al.
patent: 2002/0064953 (2002-05-01), Nishikawa et al.

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