Materials and methods for etching silicides, polycrystalline sil

Details Materials and methods for etching silicides, polycrystalline sil Materials and methods for etching silicides, polycrystalline sil

1991-10-17

1993-06-15

Dang, Thi

Compositions

Etching or brightening compositions

Inorganic acid containing

156643, 156646, 156656, 156657, 156662, H01L 21302

Patent

active

052194850

ABSTRACT:
Gas chemistry and a related RIE mode process is described for etching silicides of the refractory metals titanium, tantalum, tungsten and aluminum and for etching composites of these silicides on polycrystalline silicon layers. BCl.sub.3 is added to the HCl/Cl.sub.2 gas chemistry used for the polysilicon etch along with additives selected from fluorinated gases and oxygen to satisfy the multiple requirement of the two-step silicide-polysilicon etch process, including the silicide-to-polysilicon etch ratio requirement.

REFERENCES:
patent: 3951709 (1976-04-01), Jacob
patent: 4203800 (1980-05-01), Kitcher et al.
patent: 4478678 (1984-10-01), Watanabe
patent: 4543597 (1985-09-01), Shibata
patent: 4615764 (1986-10-01), Bobbio et al.

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