Material supplied for fabricating single-crystal semiconductor

Details Material supplied for fabricating single-crystal semiconductor Material supplied for fabricating single-crystal semiconductor

1996-12-26

1999-03-30

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 22, 117 33, 117214, 117911, 117932, C30B 1502

Patent

active

058882936

ABSTRACT:
A low-cost and high productivity charging material is provided for use in the recharge or additional charge fabrication of single-crystal semiconductor by means of the CZ method. Common polysilicon rods utilized in recharge or additional charge fabrication have their end portions formed into ring grooves. A joint element is made of silicon. When the end portions of the rods contact, the joint element engages the grooves to connect the rods together along their longitudinal direction. The rods can have arbitrary length, whereas the total weight, including the joint element, must be adjusted by the length to be greater than those of the melted polysilicon and the suspending portions.

REFERENCES:
patent: 5009864 (1991-04-01), Ibe

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