Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1993-04-26
1994-09-20
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
4272552, 117954, H01L 21205
Patent
active
053489110
ABSTRACT:
Disclosed is a process for fabricating mixed crystals and, in particular, III-V semiconductors, in which at least one component of the composition of the mixed crystal is transferred in a reactor from a source into a vapor phase containing hydrogen and chloride compounds as well as a carrier gas and mixed with said component or other components of said composition of said mixed crystal, transported to a substrate and precipitated on said substrate. The invented process is distinguished in that in order to vary the growth rate between approximately 1 <m/h and approximately 500 <m/h, the overall pressure is varied between approximately 80 mbar and approximately 1 mbar.
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Balk Pieter
Deschler Marc
Gruter Klaus
Jurgensen Holger
Aixtron GmbH
Breneman R. Bruce
Ojan Ourmazd S.
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