Method of manufacturing a semiconductor device and the product t

Fishing – trapping – and vermin destroying

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437 69, 437 26, 437 45, 437913, H01L 2176

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active

053489101

ABSTRACT:
The present invention relates to a semiconductor device and a method for manufacturing the same comprising the steps of: forming an oxidation layer on the semiconductor substrate having a predetermined conductivity; introducing impurities having the same conductivity as that of the semiconductor substrate into the semiconductor substrate; forming an anti-oxidation layer on said oxidation layer; removing an arbitrary portion of said anti-oxidation layer; growing the oxidation layer by thermally oxidizing the semiconductor substrate to form the device isolation layer; and removing said anti-oxidation layer. Since the impurities are introduced into the region ranging from the device region to the device isolation region before the anti-oxidation layer is formed, the profile of the impurity concentration distribution in the boundary region between the device region and the device isolation region is smooth. Accordingly it is possible, for example, to prevent narrow channel effects of a transistor and to remove a bird's beak region simply.

REFERENCES:
patent: 4277882 (1981-07-01), Crossley
patent: 4373965 (1983-02-01), Smigelski
patent: 4577394 (1986-03-01), Peel
patent: 4743566 (1988-05-01), Bastiaens et al.
patent: 4829019 (1989-05-01), Mitchell et al.

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