Material purification

Details Material purification Material purification

2005-06-21

2005-06-21

Norton, Nadine (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S026000, C117S047000, C117S914000, C117S922000, C117S034000

Reexamination Certificate

active

06908510

ABSTRACT:
For producing ultra pure materials a first station has a porous gas distributor. A material supply supplies material to the porous gas distributor. A gas source supplies gas to the distributor and through the distributor to the material in contact with the distributor. A heater adjacent the porous gas distributor heats and melts the material as gas is passed through the material. Dopant and a treatment liquid is or solid supplied to the material. Treated material is discharged from the first station into a second station. A second porous gas distributor in the second station distributes gas through the material in the second station. A crucible receives molten material from the second station for casting, crystal growing in the crucible or for refilling other casting or crystal growth crucibles. The material and the porous gas distributor move with respect to each other. One porous gas distributor is cylindrical and is tipped. The material supply is positioned above a lower end of the cylindrical porous gas distributor, and the discharge is positioned adjacent an opposite, raised end of the distributor. The cylindrical distributor is tippable for emptying material. Multiple parallel stations discharge multiple materials into a subsequent station or crucible.

REFERENCES:
patent: 5993540 (1999-11-01), Pandelisev

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