Material processing system and method

Radiant energy – Inspection of solids or liquids by charged particles – Analyte supports

Reexamination Certificate

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C250S306000, C250S310000, C250S440110, C250S492200, C250S492300

Reexamination Certificate

active

07435973

ABSTRACT:
A material processing system for processing a work piece is provided. The material processing is effected by supplying a reactive gas and energetic radiation for activation of the reactive gas to a surrounding of a location of the work piece to be processed. The radiation is preferably provided by an electron microscope. An objective lens of the electron microscope is preferably disposed between a detector of the electron microscope and the work piece. A gas supply arrangement of the material processing system comprises a valve disposed spaced apart from the processing location, a gas volume between the valve and a location of emergence of the reaction gas being small. The gas supply arrangement further comprises a temperature-adjusted, especially cooled reservoir for accommodating a starting material for the reactive gas.

REFERENCES:
patent: 4319570 (1982-03-01), Grane
patent: 4330707 (1982-05-01), Manzke
patent: 4698236 (1987-10-01), Kellogg et al.
patent: 4823006 (1989-04-01), Danilatos et al.
patent: 4926054 (1990-05-01), Frosien
patent: 4930439 (1990-06-01), Sato et al.
patent: 5055696 (1991-10-01), Haraichi et al.
patent: 5147823 (1992-09-01), Ishibashi et al.
patent: 5148024 (1992-09-01), Watanabe
patent: 5188705 (1993-02-01), Swanson et al.
patent: 5196102 (1993-03-01), Kumar
patent: 5229607 (1993-07-01), Matsui et al.
patent: 5273849 (1993-12-01), Harriott et al.
patent: 5342448 (1994-08-01), Hamamura et al.
patent: 5358806 (1994-10-01), Haraichi et al.
patent: 5429730 (1995-07-01), Nakamura et al.
patent: 5435850 (1995-07-01), Rasmussen
patent: 5442183 (1995-08-01), Matsui et al.
patent: 5482802 (1996-01-01), Celler et al.
patent: 5591970 (1997-01-01), Komano et al.
patent: 5616921 (1997-04-01), Talbot et al.
patent: 5639699 (1997-06-01), Nakamura et al.
patent: 5645897 (1997-07-01), Andra
patent: 5683547 (1997-11-01), Azuma et al.
patent: 5747818 (1998-05-01), Cecere
patent: 5799104 (1998-08-01), Nakamura et al.
patent: 5821017 (1998-10-01), Thomson et al.
patent: 5827786 (1998-10-01), Puretz
patent: 5828064 (1998-10-01), Knowles
patent: 5851413 (1998-12-01), Casella et al.
patent: 5885654 (1999-03-01), Hagiwara et al.
patent: 5911711 (1999-06-01), Pelkey
patent: 5989779 (1999-11-01), Hatakeyama et al.
patent: 6039000 (2000-03-01), Libby et al.
patent: 6042738 (2000-03-01), Casey, Jr. et al.
patent: 6159641 (2000-12-01), Baum et al.
patent: 6182605 (2001-02-01), Frosien
patent: 6268608 (2001-07-01), Chandler
patent: 6365905 (2002-04-01), Koyama et al.
patent: 6590210 (2003-07-01), Essers
patent: 6661005 (2003-12-01), Bruenger
patent: 6977376 (2005-12-01), Fukuda et al.
patent: 2002/0053638 (2002-05-01), Winkler et al.
patent: 2003/0168595 (2003-09-01), Danilatos
patent: 2004/0173759 (2004-09-01), Koops et al.
patent: 38 90 362 (1989-10-01), None
patent: 41 10 118 (1991-10-01), None
patent: 44 21 517 (1995-01-01), None
patent: 43 40 956 (1995-06-01), None
patent: 198 51 622 (2000-05-01), None
patent: 100 42 098 (2002-03-01), None
patent: 0 106 510 (1984-04-01), None
patent: 0 334 680 (1989-09-01), None
patent: 0 477 992 (1995-12-01), None
patent: 1 047 104 (2000-10-01), None
patent: 2 334 373 (1999-08-01), None
patent: 49-38295 (1974-04-01), None
patent: 2-62039 (1990-03-01), None
patent: 03228318 (1991-10-01), None
patent: 6-69111 (1994-03-01), None
patent: 11-354062 (1999-08-01), None
patent: 11-354520 (1999-12-01), None
patent: 2000-149844 (2000-05-01), None
patent: 2001-266784 (2001-09-01), None
patent: 98/22971 (1998-05-01), None
patent: 88/09049 (1998-11-01), None
patent: 99/40234 (1999-08-01), None
patent: 01/03145 (2001-01-01), None
patent: 02/19375 (2002-03-01), None
Shinji Matsui, et al., “Direct Writing onto Si by Electron Beam Stimulated Etching,” Applied Physics Letters, vol. 51, No. 19, Nov. 9, 1987, pp. 1498-1499.
Hans W.P. Koops et al., “Constructive three-dimensional lithography with electron-bean induced disposition for quantum effect devices” J. Vac. Sci. Technol. B 11(6), Nov./Dec. 1993, pp. 2386-2389.
U.F.W. Behringer et al., “Repair techniques for silicon transmission masks used for submicron lithography”, J. Vac. Sci. Technol. B 4(1), Jan./Feb. 1986, pp. 94-99.
Volker Scheuer et al., “Electron Beam Decomposition of Carbonyls on Silicon”, Microelectronic Engineering 5 (1986), pp. 423-430.
H.W.P. Koops, “High-resolution electron-beam induced deposition”, J. Vac. Sci. Technol. B 6(1), Jan./Feb. 1988, pp. 477-481.
Peter Gnauck et al., “A High Resolution Field Emission SEM With Variable Pressure Capabilities”, Leo 1500VP—Application Paper No. 1, http//www.leo-em.co.uk/SEMIPRODUCTS/1500vp—app01.html.

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