Material of forming silicon oxide film, silicon oxide film, meth

Details Material of forming silicon oxide film, silicon oxide film, meth Material of forming silicon oxide film, silicon oxide film, meth

1998-02-12

2000-02-08

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438780, 438781, 438787, 438790, H01L 2144

Patent

active

060228148

ABSTRACT:
A material of forming silicon oxide film comprising a polymer having a repeating unit represented by the following general formula (1A), (1B) or (1C); ##STR1## wherein R.sup.1 is a substituent group which can be eliminated at a temperature ranging from 250.degree. C. to the glass transition point of the material of forming silicon oxide film; and R.sup.2 is a substituent group which cannot be eliminated at a temperature of 250.degree. C. or more.

REFERENCES:
patent: 5324690 (1994-06-01), Gelatos et al.
patent: 5858869 (1999-01-01), Chen et al.
patent: 5858871 (1999-01-01), Jeng
Jeff W. Labadie, et al., Nanopore Foams of High Temperature Polymers, IEEE Transactions on Components, Hybrids and Manufacturing Technology, vol. 15, No. 6, (1992), pp. 925-930.
R.D. Miller, et al.,Polyimide Nanofoams From Amorphous Phase Separated Triblosk Copolymers, A.C.S. Polymer Preprints, vol. 37, No. 1, (1996), pp. 148-149.
J.L. Hedrick, et al., Polyimide Nanofoams From Aliphatic Polyester Based Copolymers, A.C.S. Polymer Preprints, vol. 37, No. 1, (1996), pp. 156-157.

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