Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-06-26
2007-06-26
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S782000, C257SE21494
Reexamination Certificate
active
11000735
ABSTRACT:
A material for forming a silica based film which enables the production of a silica based film with a reduced etching rate relative to hydrofluoric acid. This material includes a solid fraction containing a film forming component capable of generating a silica based film, an organic solvent, and water, and the water content of the material, as determined by gas chromatography measurement, is within a range from 0.1 to 50% by weight.
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Fujii Yasushi
Sato Isao
Shibuya Tatsuhiko
Everhart Caridad
Knobbe Martens Olson and Bear LLP
Tokyo Ohka Kogyo Co. Ltd.
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