Material for forming silica based film

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C438S782000, C257SE21494

Reexamination Certificate

active

11000735

ABSTRACT:
A material for forming a silica based film which enables the production of a silica based film with a reduced etching rate relative to hydrofluoric acid. This material includes a solid fraction containing a film forming component capable of generating a silica based film, an organic solvent, and water, and the water content of the material, as determined by gas chromatography measurement, is within a range from 0.1 to 50% by weight.

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