Mass production of cross-section TEM samples by focused ion...

Details Mass production of cross-section TEM samples by focused ion... Mass production of cross-section TEM samples by focused ion...

2005-04-26

2005-04-26

Olsen, Allan (Department: 1763)

Etching a substrate: processes

Etching of semiconductor material to produce an article...

C216S048000, C216S052000, C216S060000, C216S079000

Reexamination Certificate

active

06884362

ABSTRACT:
A method of preparing a TEM sample. A focused ion beam is used to deposit a mask on the material to be sampled. Reactive ion etching removes material not protected by the mask, leaving a wall thin enough to be imaged by TEM.

REFERENCES:
patent: 5525806 (1996-06-01), Iwasaki et al.
patent: 5798529 (1998-08-01), Wagner
patent: 5940678 (1999-08-01), Doong et al.
patent: 5990478 (1999-11-01), Liu
patent: 6177670 (2001-01-01), Sugiyama
patent: 6395347 (2002-05-01), Adachi et al.
patent: 6420703 (2002-07-01), Wu et al.
patent: 06061320 (1994-03-01), None
patent: 07151658 (1995-06-01), None

Affiliated with

Also associated with

Rating

Mass production of cross-section TEM samples by focused ion... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mass production of cross-section TEM samples by focused ion..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mass production of cross-section TEM samples by focused ion... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3414963