Mass production method of semiconductor integrated circuit...

Details Mass production method of semiconductor integrated circuit... Mass production method of semiconductor integrated circuit...

2008-09-10

2011-10-11

Olsen, Allan (Department: 1716)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21009, C257SE21011, C257SE21309, C257SE21476, C257SE27088

Reexamination Certificate

active

08034717

ABSTRACT:
In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).

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