Masks for lithographic imagings and methods for fabricating...

Details Masks for lithographic imagings and methods for fabricating... Masks for lithographic imagings and methods for fabricating...

2005-04-15

2009-02-17

Rosasco, Stephen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S394000

Reexamination Certificate

active

07491474

ABSTRACT:
Masks having various types of structures, such as CPL, HTPSM, or CoG structures, are without positional error with respect to one another by defining positions of the structures on the mask by a single mask lithography step. A patterned absorber layer forms in a first region, the opaque and transparent sections of the CoG structures and, in a second region, the CPL structures by serving as a hard mask for the etching of the CPL structures for example, as trenches in the mask substrate.

REFERENCES:
patent: 5328786 (1994-07-01), Miyazaki et al.
patent: 5589303 (1996-12-01), DeMarco et al.
patent: 6830702 (2004-12-01), Tzu et al.
patent: 2003/0091911 (2003-05-01), Noelscher

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