Maskless etching of polysilicon

Details Maskless etching of polysilicon Maskless etching of polysilicon

1985-02-25

1986-07-22

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156657, 156662, 204192E, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

046017780

ABSTRACT:
Maskless etching of polysilicon is accomplished by exposing portions of a polysilicon surface to ion bombardment. Bombardment by oxygen or hydrogen ions is effective to reduce the etch rate of polysilicon in a chlorine-containing plasma. Therefore, patterned ion bombardment prior to etching in a chlorine plasma is effective to pattern the polysilicon surface.

REFERENCES:
patent: 4069096 (1978-01-01), Reinberg et al.
patent: 4267011 (1981-05-01), Shibata et al.
patent: 4377437 (1983-03-01), Taylor et al.
patent: 4377734 (1983-03-01), Mashiko et al.
patent: 4383885 (1983-05-01), Maydan et al.
patent: 4438556 (1984-03-01), Komatsu et al.
patent: 4504574 (1985-03-01), Meyer et al.

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