Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1996-02-22
2000-01-04
Beck, Shrive
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
427596, 427580, 42725511, 20419212, 20429828, C23C 1400, C23C 1600
Patent
active
06010600&
ABSTRACT:
The invention is a method for the production of axially symmetric, graded and ungraded thickness thin film and multilayer coatings that avoids the use of apertures or masks to tailor the deposition profile. A motional averaging scheme permits the deposition of uniform thickness coatings independent of the substrate radius. Coating uniformity results from an exact cancellation of substrate radius dependent terms, which occurs when the substrate moves at constant velocity. If the substrate is allowed to accelerate over the source, arbitrary coating profiles can be generated through appropriate selection and control of the substrate center of mass equation of motion. The radial symmetry of the coating profile is an artifact produced by orbiting the substrate about its center of mass; other distributions are obtained by selecting another rotation axis. Consequently there is a direct mapping between the coating thickness and substrate equation of motion which can be used to tailor the coating profile without the use of masks and apertures.
REFERENCES:
patent: 5087476 (1992-02-01), Tohma et al.
patent: 5112644 (1992-05-01), Seddon et al.
patent: 5240583 (1993-08-01), Ahonen
patent: 5334302 (1994-08-01), Kubo et al.
patent: 5370737 (1994-12-01), Mathis
Ceglio Natale M.
Vernon Stephen P.
Beck Shrive
Chen Bret
The Regents of the University of California
Wooldridge John P.
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