Masking without photolithography during the formation of a...

Details Masking without photolithography during the formation of a... Masking without photolithography during the formation of a...

2006-09-05

2006-09-05

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S794000, C438S799000

Reexamination Certificate

active

07101814

ABSTRACT:
A method for forming a semiconductor device comprises forming a dielectric layer over a semiconductor wafer substrate assembly having closely-spaced regions, such as a memory transistor array, and widely-spaced regions, such as a periphery. Under conditions specified, the dielectric layer forms to have a first thickness over the closely-spaced regions and a second thickness over the widely-spaced regions. The second thickness is much thinner than the first thickness and dielectric over the widely-spaced regions may be etched away with a blanket etch which leaves the majority of the dielectric layer over the closely-spaced regions.

REFERENCES:
patent: 5438016 (1995-08-01), Figura et al.
patent: 5472904 (1995-12-01), Figura et al.
patent: 5753962 (1998-05-01), Jeng
patent: 6506647 (2003-01-01), Kuroda et al.
patent: 6777351 (2004-08-01), Hill

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