Masking process for fabricating ultra-high aspect ratio, wafer-f

Details Masking process for fabricating ultra-high aspect ratio, wafer-f Masking process for fabricating ultra-high aspect ratio, wafer-f

1995-02-03

1997-05-13

Powell, William

Etching a substrate: processes

Etching of semiconductor material to produce an article...

216 41, 216 67, 216 79, 438702, 438911, 438 50, B44C 122, H01L 2100

Patent

active

056289170

ABSTRACT:
A masking process resulting from a modified version of the SCREAM process is used for the fabrication of ultra-high aspect ratio, wafer-free, single crystal silicon movable micromechanical devices and frame structures of large vertical depth and narrow linewidth. The process is single-mask, self-aligned and allows the formation of releasable three-dimensional frame-like objects of arbitrary shape which can be made up to about half the wafer thickness in depth and can be subsequently lifted off the substrate and placed on any other material to be used as a mask or to be integrated with other devices. The process consists of a single lithography step and a repeated sequence of thermal oxidations and reactive ion etchings.

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J.H. Jerman and D.J. Clift, "Miniature Fabry-Perot interferometers micromachined in silicon for use in optical fiber WDM systems," Transducers '91 , Proceedings of the 1991 international conference on solid-state sensors and actuators, pp. 372-375, IEEE, New York 1991.

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