Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant
Reexamination Certificate
2006-08-08
2010-12-07
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Diffusing a dopant
C438S476000, C438S546000, C438S549000, C438S550000, C438S552000, C438S555000, C438S556000, C257SE21135, C257SE21141, C257SE21142, C257SE21143, C257SE21144
Reexamination Certificate
active
07846823
ABSTRACT:
A masking paste used as a mask for controlling diffusion when diffusing a p-type dopant and an n-type dopant into a semiconductor substrate and forming a high-concentration p-doped region and a high concentration n-doped region is provided that contains at least a solvent, a thickening agent, and SiO2precursor and/or a TiO2 precursor. Further, a manufacturing method of a solar cell is provided in which the masking paste is pattern-formed on the semiconductor substrate and then the p-type dopant and the n-type dopant are diffused.
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International Search Report mailed Nov. 7, 2006.
Ahmadi Mohsen
Mulpuri Savitri
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
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