Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-19
2011-07-19
Rosasco, Stephen (Department: 1721)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
07982273
ABSTRACT:
A monolithic three dimensional semiconductor device structure includes a first layer including a first occurrence of a first reference mark at a first location, and a second layer including a second occurrence of the first reference mark at a second location, wherein the second location is substantially directly above the first location. The device structure also includes an intermediate layer between the first layer and the second layer, the intermediate layer including a blocking structure, wherein the blocking structure is vertically interposed between the first occurrence of the first reference mark and the second occurrence of the first reference mark. Other aspects are also described.
REFERENCES:
patent: 5728618 (1998-03-01), Tseng
patent: 5915167 (1999-06-01), Leedy
patent: 6020263 (2000-02-01), Shih et al.
patent: 6133641 (2000-10-01), Hamada
patent: 6500750 (2002-12-01), Shroff et al.
patent: 6535274 (2003-03-01), Antoni
patent: 7224013 (2007-05-01), Herner et al.
patent: 7285464 (2007-10-01), Herner et al.
patent: 2002/0036357 (2002-03-01), Sugiyama
patent: 2005/0052915 (2005-03-01), Herner et al.
patent: 2005/0196951 (2005-09-01), Lin et al.
patent: 2006/0222962 (2006-10-01), Chen et al.
patent: 63313866 (1988-12-01), None
patent: 09232207 (1997-09-01), None
patent: 536659 (2003-06-01), None
patent: 562994 (2003-11-01), None
Office Action for related Chinese Patent Application No. 200680017181.2 issued Dec. 4, 2009.
Herner et al., U.S. Appl. No. 10/326,470, filed Dec. 19, 2002 (abandoned during examination).
Office Action for Taiwan Application No. 095111700 issued Oct. 25, 2007.
Taiwan Search Report for Taiwan Application No. 095111700 completed Sep. 14, 2007.
International Search Report for International Application No. PCT/US2006/011715 mailed Aug. 25, 2006.
Written Opinion for International Application No. PCT/US2006/011715 mailed Aug. 25, 2006.
International Preliminary Report on Patentability for International Application No. PCT/US2006/011715 issued Oct. 3, 2007.
Office Action for U.S. Appl. No. 11/097,496 mailed Sep. 5, 2008.
Feb. 4, 2009 Reply to Sep. 5, 2008 Office Action of U.S. Appl. No. 11/097,496.
Notice of Allowance of U.S. Appl. No. 11/097,496 mailed Feb. 27, 2009.
Office Action of European Application No. 06 748 959.1 dated Mar. 12, 2008.
Dec. 24, 2008 Reply to Mar. 12, 2008 Office Action of European Application No. 06 748 959.1.
Chen Yung-Tin
Kumar Tanmay
Petti Christopher J.
Radigan Steven J.
Dugan & Dugan PC
Rosasco Stephen
SanDisk 3D LLC
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