Masking methods

Details Masking methods Masking methods

2006-07-31

2008-12-30

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S783000, C438S945000, C438S952000, C257SE21024, C257SE21038, C257SE21235, C257SE21626, C257SE21640

Reexamination Certificate

active

07470606

ABSTRACT:
The invention includes masking methods. In one implementation, a masking material which includes boron doped amorphous carbon is formed over a feature formed on a semiconductor substrate. The masking material includes at least about 0.5 atomic percent boron. The masking material is substantially anisotropically etched effective to form an anisotropically etched sidewall spacer which includes the boron doped amorphous carbon on a sidewall of the feature. The substrate is then processed proximate the spacer while using the boron doped amorphous carbon-including spacer as a mask. After processing the substrate proximate the spacer, the boron doped amorphous carbon-including spacer is etched from the substrate. Other implementations and aspects are contemplated.

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