Masking methods

Details Masking methods Masking methods

2006-09-12

2006-09-12

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S783000, C438S945000, C438S952000

Reexamination Certificate

active

07105431

ABSTRACT:
The invention includes masking methods. In one implementation, a masking material comprising boron doped amorphous carbon is formed over a feature formed on a semiconductor substrate. The masking material comprises at least about 0.5 atomic percent boron. The masking material is substantially anisotropically etched effective to form an anisotropically etched sidewall spacer comprising the boron doped amorphous carbon on a sidewall of the feature. The substrate is then processed proximate the spacer while using the boron doped amorphous carbon comprising spacer as a mask. After processing the substrate proximate the spacer, the boron doped amorphous carbon comprising spacer is etched from the substrate. Other implementations and aspects are contemplated.

REFERENCES:
patent: 4382100 (1983-05-01), Holland
patent: 4436797 (1984-03-01), Brady et al.
patent: 4510176 (1985-04-01), Cuthbert et al.
patent: 4675265 (1987-06-01), Kazama et al.
patent: 4732785 (1988-03-01), Brewer
patent: 4886728 (1989-12-01), Salamy et al.
patent: 4994404 (1991-02-01), Sheng et al.
patent: 5433794 (1995-07-01), Fazan et al.
patent: 5656128 (1997-08-01), Hashimoto et al.
patent: 5754390 (1998-05-01), Sandhu et al.
patent: 5814433 (1998-09-01), Nelson et al.
patent: 5952050 (1999-09-01), Doan
patent: 6188097 (2001-02-01), Derderian et al.
patent: 6211033 (2001-04-01), Sandhu et al.
patent: 6218237 (2001-04-01), Sandhu et al.
patent: 6238994 (2001-05-01), Derderian et al.
patent: 6297112 (2001-10-01), Lin et al.
patent: 6306702 (2001-10-01), Hao et al.
patent: 6333255 (2001-12-01), Sekiguchi
patent: 6342423 (2002-01-01), Ishida et al.
patent: 6344396 (2002-02-01), Ishida et al.
patent: 6368986 (2002-04-01), Budge et al.
patent: 6369431 (2002-04-01), Gonzalez et al.
patent: 6376284 (2002-04-01), Gonzalez et al.
patent: 6395602 (2002-05-01), Sandhu et al.
patent: 6399982 (2002-06-01), Derderian et al.
patent: 6453916 (2002-09-01), Tran et al.
patent: 6472283 (2002-10-01), Ishida et al.
patent: 6475868 (2002-11-01), Hao et al.
patent: 6495312 (2002-12-01), Young et al.
patent: 6500756 (2002-12-01), Bell et al.
patent: 6524775 (2003-02-01), Oberlander et al.
patent: 6555432 (2003-04-01), Sandhu et al.
patent: 6559017 (2003-05-01), Brown et al.
patent: 6605514 (2003-08-01), Tabery et al.
patent: 6608343 (2003-08-01), Derderian et al.
patent: 6617230 (2003-09-01), Budge et al.
patent: 6653220 (2003-11-01), Ma et al.
patent: 6653733 (2003-11-01), Gonzalez et al.
patent: 6670713 (2003-12-01), Gonzalez et al.
patent: 6700211 (2004-03-01), Gonzalez et al.
patent: 6750127 (2004-06-01), Chang et al.
patent: 6875664 (2005-04-01), Huang et al.
patent: 2001/0023123 (2001-09-01), Kim
patent: 2002/0073309 (2002-06-01), Kurn et al.
patent: 2002/0088707 (2002-07-01), Towle
patent: 2002/0132451 (2002-09-01), Akino et al.
patent: 2002/0185667 (2002-12-01), Koh et al.
patent: 2003/0001187 (2003-01-01), Basceri et al.
patent: 2003/0011011 (2003-01-01), Basceri et al.
patent: 2003/0045121 (2003-03-01), Higashi
patent: 2004/0032031 (2004-02-01), Holscher et al.
patent: 2004/0043574 (2004-03-01), Steiner et al.
patent: 2005/0098105 (2005-05-01), Fuss et al.
patent: 2005/0255702 (2005-11-01), Honeycutt et al.
patent: 11-214290 (1999-06-01), None
U.S. patent application Ser. No. 10/463,185, Yin et al., filed Jun. 17, 2003.
U.S. Appl. No. 10/661,379, Zhiping et al., filing date Sep. 12, 2003.
U.S. Appl. No. 10/661,100, Sandhu et al., filing date Sep. 12, 2003.
PCT International Search Report for US04/026517, 4 pages (Jan. 12, 2005).
PCT Written Opinion for US04/026517, 6 pages (Jan. 12, 2005).

Affiliated with

Also associated with

Rating

Masking methods does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Masking methods, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Masking methods will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3601646