Masking material for applications in plasma etching

Details Masking material for applications in plasma etching Masking material for applications in plasma etching

1992-07-09

1994-03-08

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 1566611, 156660, 156667, 156653, 252 793, 148DIG106, H01L 2100

Patent

active

052924025

ABSTRACT:
Materials of the lead perovskite family PbZr.sub.x Ti.sub.1-x O.sub.3 have been discovered to be excellent masking materials in the etching of silicon and silicon-containing materials with chlorine and fluorine -based plasmas. Generally, materials of the lead perovskite family are suitable masking materials for any material that is etched in chlorine and fluorine -based plasmas.

REFERENCES:
patent: 4759823 (1988-07-01), Asselanis et al.
patent: 5028455 (1991-07-01), Miller et al.
patent: 5116643 (1992-05-01), Miller et al.
Burfoot et al, "Polar Dielectrics and their Applications," University of California Press Berkeley and Los Angeles, 1978, pp. 21-25.
Curran, "Physical and Chemical Etching in Plasmas," Elsevier Sequoia/Printed in The Netherlands, Mar. 25, 1981.
Poor et al, "Measurements of Etch Rate and Film Stoichiometry Variations During Plasma Etching of Lead-Lanthanum-Zirconium-Titanate Thin Films," 1991 American Institute of Physics, pp. 3385-3387.

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