Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2006-08-29
2006-08-29
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C257SE27133
Reexamination Certificate
active
07098067
ABSTRACT:
A novel image sensor structure formed on a substrate of a first conductivity type includes a photosensitive device of a second conductivity type and a surface pinning layer of the first conductivity type. A trench isolation region is formed adjacent to the photosensitive device pinning layer. The structure includes a dopant region comprising material of the first conductivity type formed along a sidewall of the isolation region that is adapted to electrically couple the pinning layer to the substrate. The corresponding method facilitates an angled ion implantation of dopant material in the isolation region sidewall by first fabricating the photoresist layer and reducing its size by removing a corner, or a corner portion thereof, which may block the angled implant material. To facilitate the angled implant to the sidewall edge past resist block masks, two methods are proposed: 1) a spacer type etch of the imaged photoresist; or, 2) a corner sputter process of the imaged photoresist.
REFERENCES:
patent: 5516711 (1996-05-01), Wang
patent: 6372603 (2002-04-01), Yaung et al.
patent: 6500692 (2002-12-01), Rhodes
patent: 6509221 (2003-01-01), Doris et al.
patent: 6551910 (2003-04-01), Ohashi
patent: 6611037 (2003-08-01), Rhodes
patent: 6730980 (2004-05-01), Rhodes
patent: 6767759 (2004-07-01), Rhodes
patent: 2004/0094784 (2004-05-01), Rhodes et al.
patent: 2004/0178430 (2004-09-01), Rhodes et al.
patent: 2004/0195600 (2004-10-01), Rhodes
patent: 2005/0001248 (2005-01-01), Rhodes
patent: 2005/0067640 (2005-03-01), Ohkawa
patent: 2005/0088556 (2005-04-01), Han
patent: 2005/0093038 (2005-05-01), Rhodes
patent: 08-335690 (1996-12-01), None
patent: 09-223787 (1997-08-01), None
Adkisson James W.
Jaffe Mark D.
Johnson Arthur P.
Leidy Robert K.
Maling Jeffrey C.
Canale Anthony J.
Kebede Brook
Scully , Scott, Murphy & Presser, P.C.
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