Mask-surrogate semiconductor process employing dopant protective

Details Mask-surrogate semiconductor process employing dopant protective Mask-surrogate semiconductor process employing dopant protective

1986-03-21

1988-05-31

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430317, 430945, 148187, 437 28, 437 29, 437 36, 437 41, 437147, 437150, 437157, 437229, 437907, 437913, 437931, 437984, G03C 500

Patent

active

047481030

ABSTRACT:
A mask-defect-immune process for making MOS semiconductor devices. The process features the creation of a surrogate mask in semiconductor wafer material per se, thus to eliminate the requirement that plural masks be used, and that plural mask alignments be performed. In all ways of practicing the invention, a surrogate mask is created in a dopant protective region.

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