Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-23
2010-10-05
Garber, Charles D (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27091, C257SE29200, C257SE29257, C257SE29260, C257SE21551, C438S242000, C438S246000, C438S424000, C438S514000, C438S700000
Reexamination Certificate
active
07808029
ABSTRACT:
A mask structure and process for forming trenches in a silicon carbide or other wafer, and for implanting impurities into the walls of the trenches using the same mask where the mask includes a thin aluminum layer and a patterned hard photoresist mask. A thin LTO oxide may be placed between the metal layer and the hard photoresist mask.
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Carta Rossano
Merlin Luigi
Richieri Giovanni
Abdelaziez Yasser A
Garber Charles D
Siliconix Technology C.V.
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