Mask structure for lithography, method of preparation thereof an

Details Mask structure for lithography, method of preparation thereof an Mask structure for lithography, method of preparation thereof an

1988-03-14

1989-06-06

Dees, Jose G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

430 5, 430321, 430322, 428698, 428702, G03C 500, G03F 100

Patent

active

048371238

ABSTRACT:
A mask structure for lithography has a mask material holding thin film and a holding substrate for holding the peripheral portion of said mask material holding thin film, said mask material holding thin film comprising a film comprising aluminum, nitrogen and oxygen.

REFERENCES:
patent: 4363846 (1982-12-01), Kaneki
patent: 4374912 (1983-02-01), Kaneki et al.
patent: 4440841 (1984-04-01), Tabuchi
patent: 4451544 (1984-05-01), Kawabucki
patent: 4539278 (1985-09-01), Williams et al.
patent: 4563407 (1986-01-01), Matsui et al.

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