Mask structure for forming semiconductor devices, comprising ele

Radiation imagery chemistry: process – composition – or product th – Imaged product – Structurally defined

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430 12, 430 15, 430 16, 430 18, 430273, 430275, 430296, 430312, 430314, H01L 21312

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043418503

ABSTRACT:
The specification describes a mask structure comprising a resist pattern having a controlled line profile, for use in defining a predetermined region on and above a substrate. First, a composite electron-beam sensitive resist comprising a bottom layer of resist, a middle layer of a chosen conductive material, and a top layer of resist is formed on a selected substrate. The substrate with the composite resist is exposed to a beam of electrons to simultaneously define a predetermined pattern in the top and bottom layers of the resist. Next, a first chosen solvent is applied for a first predetermined period of time to develop the pattern in the top layer of resist, with the layer of conductive material protecting the bottom layer of resist from exposure to the first chosen solvent. Then, the portion of the conductive layer which is exposed after development of the top resist layer, is removed. Finally, a second chosen solvent is applied for a second predetermined period of time to develop the pattern in the bottom layer of resist and to thereby form a T-shaped profile in the composite resist, which serves as the mask structure to define the desired region on and above the substrate.

REFERENCES:
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