Mask set for variable mask field exposure

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Reexamination Certificate

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07638245

ABSTRACT:
A method of fabricating integrated circuits according to a first design. One first pattern is common with a second design, and one second pattern is unique to the first design. The first pattern is imaged using a first mask having first patterns formed in a block thereon. No other patterns of the first and second designs are formed on the first mask. The second patterns are imaged on the substrate using a second mask having second patterns formed in a block thereon. At least one third layer pattern is formed on the second mask.

REFERENCES:
patent: 5175128 (1992-12-01), Ema et al.
patent: 5663017 (1997-09-01), Schinella et al.
patent: 5885749 (1999-03-01), Huggins et al.
patent: 6136517 (2000-10-01), Fletcher

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