Mask schemes for patterning magnetic tunnel junctions

Details Mask schemes for patterning magnetic tunnel junctions Mask schemes for patterning magnetic tunnel junctions

2006-02-21

2006-02-21

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S257000

Reexamination Certificate

active

07001783

ABSTRACT:
Methods of patterning magnetic tunnel junctions (MTJ's) of magnetic memory devices that avoid shorting magnetic memory cells to upper levels of conductive lines during etching processes. One method involves using a hard mask having two material layers to pattern the lower magnetic material layers of an MTJ. The first material of the hard mask is thin and comprises an etch-resistant material. The second material of the hard mask deposited over the first material is thicker and is less etch-resistant than the first material. At least a portion of the second material is sacrificially removed during the etch process of the lower magnetic material layers. A conformal or non-conformal material may be used as the second material of the hard mask. The hard mask used to pattern lower magnetic materials of an MTJ may comprise a single layer of non-conformal material.

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