Mask-ROM process and device to prevent punch through using a...

Details Mask-ROM process and device to prevent punch through using a... Mask-ROM process and device to prevent punch through using a...

2005-09-06

2005-09-06

Tsai, H. Jey (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S275000

Reexamination Certificate

active

06940135

ABSTRACT:
A method and device for manufacturing a mask ROM integrated circuit device to reduce influences of punch through between source and channel regions that output improper program readings. The method includes forming well regions using an implant process on semiconductor substrate and forming a plurality of buried implant regions through first patterned mask. The first patterned mask is formed overlying the semiconductor substrate. Each of the buried implant regions includes a source region and a drain region for each respective memory cell region. The memory cell region is one of a plurality of memory cell regions. The method also forms pocket regions adjacent to a vicinity of each of the buried implant regions within the channel region for each of the memory cell regions. A first pocket region is defined between the channel region and source region and a second pocket region is defined between the channel region and the drain region for each memory cell region. The method includes programming one or more selected channel regions using implantation to program respective one or more selected memory cell regions.

REFERENCES:
patent: 4649629 (1987-03-01), Miller et al.
patent: 5780344 (1998-07-01), Hasegawa
patent: 6201282 (2001-03-01), Eitan

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