Mask ROM for storing plural-bit data

Details Mask ROM for storing plural-bit data Mask ROM for storing plural-bit data

1993-08-10

1995-04-11

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Capacitors

365102, G11C 1124

Patent

active

054065119

ABSTRACT:
Memory cells are formed at mutually facing areas of conductive layers arranged in parallel in a lateral direction and conductive layers arranged in a direction orthogonal to the lateral direction. A plurality of capacitors are formed, as a matrix array, at those mutually facing area of the conductive layers crossing relative to each other in the mutually orthogonal relation. Each capacitor constitutes a memory cell. A plurality of capacity levels, each, are set as a corresponding capacitor level by varying a mutually facing area between the conductive layers.

REFERENCES:
patent: 5020025 (1991-05-01), Nix et al.
Three-Dimensional Capacitor Read Only Storage. S. A. Abbas. IBM Disclosure Bulletin. vol. 10, No. 7, Dec. '67.

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