Mask ROM device with gate insulation film based in pad oxide fil

Details Mask ROM device with gate insulation film based in pad oxide fil Mask ROM device with gate insulation film based in pad oxide fil

1995-12-22

1998-09-29

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Semiconductive

36515501, 36518509, 257326, 257390, G11C 1134, H01L 2702

Patent

active

058154337

ABSTRACT:
A cell portion 10 of a MOS structure and a redundant cell portion 12 of an MNOS structure are formed in a single semiconductor substrate. These MOS and MNOS structures commonly include an oxide film 26. A laminate structure consisting of a silicon nitride film and a pad oxide film and used in the element separation step is included in the redundant cell portion 12. Therefore, the redundant circuit can be naturally formed without increasing the number of process steps, leading to a high yield without inviting an increase in the manufacturing cost.

REFERENCES:
patent: 4942450 (1990-07-01), Iwashita
patent: 5329482 (1994-07-01), Nakajima
patent: 5337274 (1994-08-01), Ohji
patent: 5383162 (1995-01-01), Shirai
patent: 5400278 (1995-03-01), Kunori
patent: 5455438 (1995-10-01), Hashimoto
patent: 5493139 (1996-02-01), Akiyama
Prince, Betty, Semiconductor Memories A Handbook of Design Manufacture and Application, second edition, pp. v-xvii and pp. 764-773, published 1991 by John Wiley & Sons, West Sussex, England.

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