Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-07-13
1997-02-04
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257391, 257392, 437 48, 437 52, H01L 2976, H01L 21265
Patent
active
056001711
ABSTRACT:
A mask ROM device includes a plurality of memory cells each having an enhancement type FET having a gate electrode and first and second source/drain regions, a plurality of word lines connected to the gate electrodes, a plurality of bit lines connected to the first source/drain regions, a connection line formed above the gate electrode so as to electrically connect the first and second source/drain regions through contact holes in each of memory cells selected according to information to be stored.
REFERENCES:
patent: 5323048 (1994-06-01), Onuma
Kaneko Masahide
Kohda Kenji
Makihara Hiroyasu
Okugaki Akira
Mitsubishi Denki & Kabushiki Kaisha
Prenty Mark V.
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