Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-02-07
1998-04-07
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257391, 365 94, 365104, H01L 29772, G11C 1700
Patent
active
057367710
ABSTRACT:
A multi-level memory cell structure, and a method of fabrication thereby is disclosed. In a mask ROM memory device, the conventional binary data storage cell is replaced with a 16-level data storage cell. The 16-level cell is programmed with a selected one of 16 values by forming a void in a portion of the word line over the memory cell having one of 16 widths corresponding to the preselected code to be stored therein. The portion of the word line associated with the coded memory cell has an effective remaining width corresponding to the preselected code. When the memory cell is enabled by activating its associated word line, due to the variable width of the word line forming the gate of the memory cell, one of 16 discrete currents flow in the 16-level memory cell structure. The current is indicative of the preselected code stored in the cell.
REFERENCES:
patent: 5236853 (1993-08-01), Hsue
patent: 5561624 (1996-10-01), Chen et al.
Chen Kun-Lu
Huang Hon-Shen
Wu Zon-Sheng
Hardy David B.
Thomas Tom
United Microelectronics Corporation
LandOfFree
Mask ROM cell structure with multi-level data selection by code does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Mask ROM cell structure with multi-level data selection by code, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mask ROM cell structure with multi-level data selection by code will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-15547