Mask patterns for use in multiple-exposure lithography

Details Mask patterns for use in multiple-exposure lithography Mask patterns for use in multiple-exposure lithography

2009-04-14

2011-12-20

Dinh, Paul (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Design of semiconductor mask or reticle

C716S053000, C716S054000, C716S055000

Reexamination Certificate

active

08082524

ABSTRACT:
A method for determining mask patterns to be used on photo-masks in a multiple-exposure photolithographic process is described. During the method, an initial mask pattern, which is intended for use in a single-exposure photolithographic process, and a target pattern that is to be printed are used to determine a first mask pattern and a second mask pattern, which are intended for use in the multiple-exposure photolithographic process. In particular, the first mask pattern includes a first feature and the second mask pattern includes a second feature, and the first feature and the second feature overlap an intersection between features in the initial mask pattern. Moreover, the first mask pattern and the second mask pattern have at least one decreased spatial frequency relative to the initial mask pattern along at least one direction in the initial mask pattern.

REFERENCES:
patent: 6042998 (2000-03-01), Brueck et al.
patent: 6233044 (2001-05-01), Brueck et al.
patent: 6320648 (2001-11-01), Brueck et al.
patent: 6698007 (2004-02-01), Wu et al.
patent: 6733929 (2004-05-01), Pierrat
patent: 6787271 (2004-09-01), Cote
patent: 6968532 (2005-11-01), Sivakumar et al.
patent: 7124394 (2006-10-01), Abrams et al.
patent: 7178127 (2007-02-01), Abrams et al.
patent: 7441227 (2008-10-01), Abrams et al.
patent: 7480889 (2009-01-01), Abrams et al.
patent: 7571423 (2009-08-01), Abrams et al.
patent: 2003/0165749 (2003-09-01), Fritze et al.
patent: 2004/0006757 (2004-01-01), Chen et al.
patent: 2004/0166422 (2004-08-01), Yamazoe et al.
patent: 2004/0173737 (2004-09-01), Shimomura et al.
patent: 2004/0265707 (2004-12-01), Socha
patent: 2005/0031182 (2005-02-01), Inoue
patent: 2005/0099614 (2005-05-01), Sugita et al.
patent: 2005/0122500 (2005-06-01), Ye et al.
patent: 2005/0287483 (2005-12-01), Lercel et al.
patent: 2007/0009808 (2007-01-01), Abrams et al.
patent: 2007/0011644 (2007-01-01), Abrams et al.
patent: 2007/0011645 (2007-01-01), Abrams et al.
patent: 2007/0011647 (2007-01-01), Abrams et al.
patent: 2007/0136716 (2007-06-01), Abrams et al.
patent: 2007/0184357 (2007-08-01), Abrams et al.
patent: 2007/0184369 (2007-08-01), Abrams et al.
patent: 2007/0186206 (2007-08-01), Abrams et al.
patent: 2007/0192756 (2007-08-01), Abrams et al.
patent: 2007/0198966 (2007-08-01), Abrams et al.
Wang, Y-T, et al., “Automated design of halftoned double-exposure phase-shifting masks”, Proc. SPIE vol. 2440 pp. 290-301 (1995).

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