Mask patterns for semiconductor device fabrication and...

Radiation imagery chemistry: process – composition – or product th – Imaged product – Multilayer

Reexamination Certificate

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Details

C430S166000, C430S270100, C430S296000, C430S311000, C430S322000

Reexamination Certificate

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07855038

ABSTRACT:
Methods of forming an integrated circuit device may include forming a resist pattern on a layer of an integrated circuit device with portions of the layer being exposed through openings of the resist pattern. An organic-inorganic hybrid siloxane network film may be formed on the resist pattern. Portions of the layer exposed through the resist pattern and the organic-inorganic hybrid siloxane network film may then be removed. Related structures are also discussed.

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Korean Intellectual Property Office “Notice to Submit Response” for Korean Appl. No. 10-2004-0076349, issued on Mar. 28, 2006.

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