Radiation imagery chemistry: process – composition – or product th – Imaged product – Multilayer
Reexamination Certificate
2007-12-03
2009-10-20
Chu, John S (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaged product
Multilayer
C430S192000, C430S270100, C430S330000, C430S331000
Reexamination Certificate
active
07604911
ABSTRACT:
A mask pattern for semiconductor device fabrication comprises a resist pattern formed on a semiconductor substrate, and an interpolymer complex film formed on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer.
REFERENCES:
patent: 6486058 (2002-11-01), Chun
patent: 7189499 (2007-03-01), Sugeta et al.
patent: 2003/0008968 (2003-01-01), Sugeta et al.
patent: 2004/0067303 (2004-04-01), Sugeta et al.
Hah Jung-Hwan
Hata Mitsuhiro
Kim Hyun-Woo
Woo Sang-Gyun
Chu John S
F. Chau & Associates LLC
Samsung Electronics Co,. Ltd.
LandOfFree
Mask pattern for semiconductor device fabrication, method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Mask pattern for semiconductor device fabrication, method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mask pattern for semiconductor device fabrication, method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4097894