Mask pattern for semiconductor device fabrication, method of...

Radiation imagery chemistry: process – composition – or product th – Imaged product – Multilayer

Reexamination Certificate

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C430S192000, C430S270100, C430S330000, C430S331000

Reexamination Certificate

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07604911

ABSTRACT:
A mask pattern for semiconductor device fabrication comprises a resist pattern formed on a semiconductor substrate, and an interpolymer complex film formed on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer.

REFERENCES:
patent: 6486058 (2002-11-01), Chun
patent: 7189499 (2007-03-01), Sugeta et al.
patent: 2003/0008968 (2003-01-01), Sugeta et al.
patent: 2004/0067303 (2004-04-01), Sugeta et al.

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