Mask pattern for semiconductor device fabrication, method of...

Radiation imagery chemistry: process – composition – or product th – Imaged product – Multilayer

Reexamination Certificate

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C430S330000, C427S154000, C427S372200, C427S340000, C427S384000, C427S385500

Reexamination Certificate

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07314691

ABSTRACT:
A mask pattern for semiconductor device fabrication comprises a resist pattern formed on a semiconductor substrate, and an interpolymer complex film formd on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer.

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English Abstract Only.

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