Radiation imagery chemistry: process – composition – or product th – Imaged product – Multilayer
Reexamination Certificate
2008-01-01
2008-01-01
Chu, John S. (Department: 1752)
Radiation imagery chemistry: process, composition, or product th
Imaged product
Multilayer
C430S330000, C427S154000, C427S372200, C427S340000, C427S384000, C427S385500
Reexamination Certificate
active
07314691
ABSTRACT:
A mask pattern for semiconductor device fabrication comprises a resist pattern formed on a semiconductor substrate, and an interpolymer complex film formd on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer.
REFERENCES:
patent: 4722882 (1988-02-01), Roberts
patent: 4737425 (1988-04-01), Lin et al.
patent: 4762768 (1988-08-01), Grunwald et al.
patent: 6486058 (2002-11-01), Chun
patent: 6605413 (2003-08-01), Lyons et al.
patent: 7189499 (2007-03-01), Sugeta et al.
patent: 2003/0008968 (2003-01-01), Sugeta et al.
patent: 2004/0067303 (2004-04-01), Sugeta et al.
patent: 11029501 (1999-02-01), None
patent: 2003-131400 (2003-05-01), None
patent: 2004-037570 (2004-02-01), None
patent: 2004-77951 (2004-03-01), None
patent: 10-2004-0015955 (2004-02-01), None
patent: 2004-0026105 (2004-03-01), None
English Abstract Only.
Hah Jung-Hwan
Hata Mitsuhiro
Kim Hyun-woo
Woo Sang-gyun
Chu John S.
F. Chau & Associate, LLC
Samsung Electronics Co,. Ltd.
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