Mask forming and removing method, and semiconductor device,...

Details Mask forming and removing method, and semiconductor device,... Mask forming and removing method, and semiconductor device,...

2006-12-12

2006-12-12

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Having liquid and vapor etching steps

C438S707000, C438S715000

Reexamination Certificate

active

07148148

ABSTRACT:
A mask forming method that can reduce manufacturing cost is disclosed. The method forms a mask on the surface of a member to be processed in order to form a desired pattern using liquid material for patterning. The method also includes applying resist to the entire surface of the member to be processed, drying the applied resist, patterning by removing the resist in a pattern-formation area using photolithography, and heating the resist.

REFERENCES:
patent: 5658697 (1997-08-01), Lin
patent: 5863233 (1999-01-01), Porter et al.
patent: 6120674 (2000-09-01), Porter et al.
patent: 6613486 (2003-09-01), Ohtsu et al.
patent: 2002/0011421 (2002-01-01), Haba et al.
patent: 1 113 502 (2001-07-01), None
patent: A-9-186069 (1997-07-01), None
patent: A-2000-277520 (2000-10-01), None
patent: A-2000-282240 (2000-10-01), None
patent: A-2000-357685 (2000-12-01), None
patent: A-2001-284289 (2001-10-01), None
patent: A-2002-50610 (2002-02-01), None
patent: WO00/59040 (2000-10-01), None

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